SISS42 Series

Catalog

MOSFET N-CH 100V 11.8/40.5A PPAK

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)
Vishay General Semiconductor - Diodes Division SISS42DN-T1-GE3	1850 pF	N-Channel	38 nC	10 V	7.5 V	Surface Mount	100 V	3.4 V	PowerPAK® 1212-8S	11.8 A 40.5 A	MOSFET (Metal Oxide)	-55 °C	150 °C	4.8 W 57 W	14.4 mOhm	PowerPAK® 1212-8S	20 V