Specification	NSS12200WT1G

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	450 mW
Supplier Device Package	SC70-6, SC-88, SOT-363
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	290 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

NSS12200L Series

Low VCE(sat) Transistor, PNP, 12 V, 2.0 A

Part	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Frequency - Transition	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Qualification	Power - Max [Max]	Grade
ON Semiconductor NSS12200LT1G	PNP	Surface Mount	180 mV	100 MHz	SC-59 SOT-23-3 TO-236-3	12 V	-55 °C	150 °C	250	2 A	100 nA	SOT-23-3 (TO-236)
ON Semiconductor NSV12200LT1G	PNP	Surface Mount	180 mV	100 MHz	SC-59 SOT-23-3 TO-236-3	12 V	-55 °C	150 °C	250	2 A	100 nA	SOT-23-3 (TO-236)	AEC-Q101	540 mW	Automotive
ON Semiconductor NSS12200WT1G	PNP	Surface Mount	290 mV	100 MHz	6-TSSOP SC-88 SOT-363	12 V	-55 °C	150 °C	100	2 A	100 nA	SC-88 SC70-6 SOT-363		450 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NSS12200L Series

Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.