NSS12200L Series

Low VCE(sat) Transistor, PNP, 12 V, 2.0 A

Catalog

Low VCE(sat) Transistor, PNP, 12 V, 2.0 A

Part	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Frequency - Transition	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Qualification	Power - Max [Max]	Grade
ON Semiconductor NSS12200LT1G	PNP	Surface Mount	180 mV	100 MHz	SC-59 SOT-23-3 TO-236-3	12 V	-55 °C	150 °C	250	2 A	100 nA	SOT-23-3 (TO-236)
ON Semiconductor NSV12200LT1G	PNP	Surface Mount	180 mV	100 MHz	SC-59 SOT-23-3 TO-236-3	12 V	-55 °C	150 °C	250	2 A	100 nA	SOT-23-3 (TO-236)	AEC-Q101	540 mW	Automotive
ON Semiconductor NSS12200WT1G	PNP	Surface Mount	290 mV	100 MHz	6-TSSOP SC-88 SOT-363	12 V	-55 °C	150 °C	100	2 A	100 nA	SC-88 SC70-6 SOT-363		450 mW

Catalog

Low VCE(sat) Transistor, PNP, 12 V, 2.0 A

Key Features

• High Current, Low VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

Description

Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.