Discrete Semiconductor Products
STGWT28IH125DF
ActiveSTMicroelectronics
1250 V, 25 A IH SERIES TRENCH GATE FIELD-STOP IGBT
Discrete Semiconductor Products
STGWT28IH125DF
ActiveSTMicroelectronics
1250 V, 25 A IH SERIES TRENCH GATE FIELD-STOP IGBT
Technical Specifications
Parameters and characteristics for this part
| Specification | STGWT28IH125DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 114 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 375 W |
| Supplier Device Package | TO-3P |
| Switching Energy | 720 µJ |
| Td (on/off) @ 25°C | 128 ns |
| Td (on/off) @ 25°C | - |
| Test Condition | 25 A, 600 V, 10 Ohm, 15 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1250 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.60 | |
| Tube | 600 | $ 2.08 | ||
Description
General part information
STGWT28 Series
These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.