STH110N10F7-2
ObsoleteTRANS MOSFET N-CH 100V 110A 3-PIN(2+TAB) H2PAK T/R
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STH110N10F7-2
ObsoleteTRANS MOSFET N-CH 100V 110A 3-PIN(2+TAB) H2PAK T/R
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Technical Specifications
Parameters and characteristics for this part
| Specification | STH110N10F7-2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 5117 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm |
| Supplier Device Package | H2Pak-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.37 | |
| 10 | $ 2.83 | |||
| Digi-Reel® | 1 | $ 3.37 | ||
| 10 | $ 2.83 | |||
| N/A | 90 | $ 1.20 | ||
| Tape & Reel (TR) | 1000 | $ 1.35 | ||
| 2000 | $ 1.29 | |||
| 5000 | $ 1.24 | |||
Description
General part information
STH110 Series
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.Among the lowest RDS(on)on the marketExcellent figure of merit (FoM)Low Crss/Cissratio for EMI immunityHigh avalanche ruggedness
Documents
Technical documentation and resources