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Trans MOSFET N-CH 40V 100A 4-Pin LFPAK-56 T/R
Discrete Semiconductor Products

PSMN1R7-25YLDX

Active
Freescale Semiconductor - NXP

N-CHANNEL 25 V, 1.75 MOHM, 200 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

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Trans MOSFET N-CH 40V 100A 4-Pin LFPAK-56 T/R
Discrete Semiconductor Products

PSMN1R7-25YLDX

Active
Freescale Semiconductor - NXP

N-CHANNEL 25 V, 1.75 MOHM, 200 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN1R7-25YLDX
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46.7 nC
Input Capacitance (Ciss) (Max) @ Vds3415 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-669, SC-100
Power Dissipation (Max)135 W
Rds On (Max) @ Id, Vgs1.7 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.42
10$ 1.16
100$ 0.90
500$ 0.77
Digi-Reel® 1$ 1.42
10$ 1.16
100$ 0.90
500$ 0.77
Tape & Reel (TR) 1500$ 0.62
3000$ 0.59
7500$ 0.56
10500$ 0.55

Description

General part information

PSMN1R7-25YLD Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.