Discrete Semiconductor Products

PSMN1R7-30YL,115

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Freescale Semiconductor - NXP

MOSFET N-CH 30V 100A LFPAK56

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Discrete Semiconductor Products

PSMN1R7-30YL,115

Active

Freescale Semiconductor - NXP

MOSFET N-CH 30V 100A LFPAK56

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R7-30YL,115

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	77.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5057 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	109 W
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

PSMN1R7-25YLD Series

N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Part	Technology	Vgs(th) (Max) @ Id	FET Feature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs (Max)	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP PSMN1R7-25YLDX	MOSFET (Metal Oxide)	2.2 V	Schottky Diode (Body)	100 A	25 V	135 W	-55 °C	175 ░C	4.5 V 10 V	SC-100 SOT-669	3415 pF	1.7 mOhm	46.7 nC	Surface Mount	20 V	LFPAK56 Power-SO8	N-Channel
Freescale Semiconductor - NXP PSMN1R7-30YL,115	MOSFET (Metal Oxide)			100 A	30 V		-55 °C	175 ░C	4.5 V 10 V	SC-100 SOT-669		1.7 mOhm	77.9 nC	Surface Mount	20 V	LFPAK56 Power-SO8	N-Channel	2.15 V	5057 pF	109 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.59
		10	$ 1.32
		100	$ 1.05
		500	$ 0.89
	Digi-Reel®	1	$ 1.59
		10	$ 1.32
		100	$ 1.05
		500	$ 0.89
	Tape & Reel (TR)	1500	$ 0.69

Description

General part information

PSMN1R7-25YLD Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Documents

Technical documentation and resources