STW58N65DM2AG
ActiveAUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.058 OHM TYP., 48 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE
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STW58N65DM2AG
ActiveAUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.058 OHM TYP., 48 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW58N65DM2AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 48 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 88 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4100 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 360 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 65 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW58N65DM2AG Series
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Documents
Technical documentation and resources