Discrete Semiconductor Products
STW58N65DM2AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.058 OHM TYP., 48 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE
Discrete Semiconductor Products
STW58N65DM2AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.058 OHM TYP., 48 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW58N65DM2AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 48 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4100 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 360 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 65 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW58N65DM2AG Series
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources