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8 Power TDFN
Discrete Semiconductor Products

NHP620MFDT3G

Obsolete
ON Semiconductor

RECTIFIER, 6 A (3 X 2), 200 V ULTRAFAST DUAL DIE

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8 Power TDFN
Discrete Semiconductor Products

NHP620MFDT3G

Obsolete
ON Semiconductor

RECTIFIER, 6 A (3 X 2), 200 V ULTRAFAST DUAL DIE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNHP620MFDT3G
Current - Average Rectified (Io) (per Diode)3 A
Current - Reverse Leakage @ Vr500 nA
Diode Configuration2 Independent
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / Case8-PowerTDFN
QualificationAEC-Q101
Reverse Recovery Time (trr)25 ns
Speed200 mA, 500 ns
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NHP620LFS Series

This ultrafast rectifier in the dual flag SO−8 flat lead package offersdesigners a unique degree of versatility and design freedom. The twodevices are electrically independent and can be used separately, ascommon cathode, as common anode or in series as a function of boardlevel layout. The exposed pad design provides low thermal resistance.The clip attach design creates a package with very efficient die size toboard area ratio. While thermal performance is nearly the same as theDPAK package height and board footprint are less than half

Documents

Technical documentation and resources