
NHP620MFDT3G
ObsoleteRECTIFIER, 6 A (3 X 2), 200 V ULTRAFAST DUAL DIE

NHP620MFDT3G
ObsoleteRECTIFIER, 6 A (3 X 2), 200 V ULTRAFAST DUAL DIE
Technical Specifications
Parameters and characteristics for this part
| Specification | NHP620MFDT3G |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 3 A |
| Current - Reverse Leakage @ Vr | 500 nA |
| Diode Configuration | 2 Independent |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | 8-PowerTDFN |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NHP620LFS Series
This ultrafast rectifier in the dual flag SO−8 flat lead package offersdesigners a unique degree of versatility and design freedom. The twodevices are electrically independent and can be used separately, ascommon cathode, as common anode or in series as a function of boardlevel layout. The exposed pad design provides low thermal resistance.The clip attach design creates a package with very efficient die size toboard area ratio. While thermal performance is nearly the same as theDPAK package height and board footprint are less than half
Documents
Technical documentation and resources