STN1NK80Z
ActiveN-CHANNEL 800 V, 13 OHM TYP., 250 MA SUPERMESH POWER MOSFET IN A SOT-223 PACKAGE
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STN1NK80Z
ActiveN-CHANNEL 800 V, 13 OHM TYP., 250 MA SUPERMESH POWER MOSFET IN A SOT-223 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STN1NK80Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 250 mA |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 2.5 W |
| Supplier Device Package | SOT-223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.21 | |
| 10 | $ 0.99 | |||
| 100 | $ 0.77 | |||
| 500 | $ 0.65 | |||
| 1000 | $ 0.53 | |||
| 2000 | $ 0.50 | |||
| Digi-Reel® | 1 | $ 1.21 | ||
| 10 | $ 0.99 | |||
| 100 | $ 0.77 | |||
| 500 | $ 0.65 | |||
| 1000 | $ 0.53 | |||
| 2000 | $ 0.50 | |||
| N/A | 3433 | $ 0.83 | ||
| Tape & Reel (TR) | 4000 | $ 0.50 | ||
| 8000 | $ 0.48 | |||
| 12000 | $ 0.45 | |||
| Mouser | N/A | 1 | $ 1.15 | |
| 10 | $ 0.92 | |||
| 25 | $ 0.85 | |||
| 100 | $ 0.68 | |||
| 250 | $ 0.65 | |||
| 500 | $ 0.55 | |||
| 1000 | $ 0.51 | |||
| 2000 | $ 0.49 | |||
| 4000 | $ 0.47 | |||
| Newark | Each (Supplied on Full Reel) | 4000 | $ 0.66 | |
| 8000 | $ 0.65 | |||
Description
General part information
STN1NK80 Series
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources