Zenode.ai Logo
Beta
INFINEON IRF5210STRLPBF
Discrete Semiconductor Products

NTD25P03LT4G

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 25 A, 0.056 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

INFINEON IRF5210STRLPBF
Discrete Semiconductor Products

NTD25P03LT4G

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 25 A, 0.056 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTD25P03LT4G
Current - Continuous Drain (Id) @ 25°C25 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)5 V, 4 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC
Input Capacitance (Ciss) (Max) @ Vds1260 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)75 W
Rds On (Max) @ Id, Vgs80 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)15 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.36
10$ 1.11
100$ 0.87
500$ 0.73
1000$ 0.60
Digi-Reel® 1$ 1.36
10$ 1.11
100$ 0.87
500$ 0.73
1000$ 0.60
Tape & Reel (TR) 2500$ 0.56
5000$ 0.54
12500$ 0.51
NewarkEach (Supplied on Full Reel) 2500$ 0.58
5000$ 0.56
10000$ 0.56
ON SemiconductorN/A 1$ 0.35

Description

General part information

NTD25P03L Series

Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete fast recovery diode.