NTD25P03L Series

Single P-Channel Logic Level Power MOSFET -30V, -25A, 72mΩ

Catalog

Single P-Channel Logic Level Power MOSFET -30V, -25A, 72mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor NTD25P03LG	4 V 5 V	P-Channel	80 mOhm	1260 pF	2 V	15 V	-55 °C	150 °C	25 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	75 W	DPAK	20 nC	Surface Mount	MOSFET (Metal Oxide)	30 V
ON Semiconductor NTD25P03LRLG	4 V 5 V	P-Channel	80 mOhm	1260 pF	2 V	15 V	-55 °C	150 °C	25 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	75 W	DPAK	20 nC	Surface Mount	MOSFET (Metal Oxide)	30 V
ON Semiconductor NTD25P03LT4	4 V 5 V	P-Channel	80 mOhm	1260 pF	2 V	15 V	-55 °C	150 °C	25 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	75 W	DPAK	20 nC	Surface Mount	MOSFET (Metal Oxide)	30 V
ON Semiconductor NTD25P03LT4G	4 V 5 V	P-Channel	80 mOhm	1260 pF	2 V	15 V	-55 °C	150 °C	25 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	75 W	DPAK	20 nC	Surface Mount	MOSFET (Metal Oxide)	30 V

Catalog

Single P-Channel Logic Level Power MOSFET -30V, -25A, 72mΩ

Key Features

• RoHS Compliant

Description

Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete fast recovery diode.