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Discrete Semiconductor Products

2N5794UC

Active
Microchip Technology

NPN SILICON DUAL 40V, 0.6A

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Search across all available documentation for this part.

Discrete Semiconductor Products

2N5794UC

Active
Microchip Technology

NPN SILICON DUAL 40V, 0.6A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N5794UC
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Mounting TypeSurface Mount
Package / Case6-SMD, No Lead
Power - Max [Max]600 mW
Supplier Device PackageUC
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic900 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 71.85
Microchip DirectN/A 1$ 77.38

Description

General part information

JANTXV2N5794AUC-Dual-Transistor Series

This specification covers the performance requirements for unitized, dual transistors which contains a pair of electrically isolated matched and unmatched NPN, silicon , 2N5793 and 2N5794 Unitized, dual 2N2222A transistors in one package. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/495. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources