STGWT30HP65FB
LTBTRENCH GATE FIELD-STOP 650 V, 30 A HIGH SPEED HB SERIES IGBT
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STGWT30HP65FB
LTBTRENCH GATE FIELD-STOP 650 V, 30 A HIGH SPEED HB SERIES IGBT
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGWT30HP65FB |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 149 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 260 W |
| Reverse Recovery Time (trr) | 140 ns |
| Supplier Device Package | TO-3P |
| Switching Energy | 293 µJ |
| Td (on/off) @ 25°C | 146 ns |
| Td (on/off) @ 25°C | - |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
STGWT30HP65FB Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources