Discrete Semiconductor Products
CSD16323Q3
ActiveTexas Instruments
25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 5.5 MOHM
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Discrete Semiconductor Products
CSD16323Q3
ActiveTexas Instruments
25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 5.5 MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD16323Q3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21 A, 60 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 3 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) [Max] | 3 W |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 10 V |
| Vgs (Max) [Min] | -8 V |
| Vgs(th) (Max) @ Id | 1.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.72 | |
| 10 | $ 1.09 | |||
| 100 | $ 0.73 | |||
| 500 | $ 0.58 | |||
| 1000 | $ 0.53 | |||
| Digi-Reel® | 1 | $ 1.72 | ||
| 10 | $ 1.09 | |||
| 100 | $ 0.73 | |||
| 500 | $ 0.58 | |||
| 1000 | $ 0.53 | |||
| Tape & Reel (TR) | 2500 | $ 0.47 | ||
| 5000 | $ 0.44 | |||
| 7500 | $ 0.42 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.35 | |
| 10 | $ 1.29 | |||
| 25 | $ 1.23 | |||
| 50 | $ 1.18 | |||
| 100 | $ 1.12 | |||
| 250 | $ 1.08 | |||
| 500 | $ 1.06 | |||
| 1000 | $ 1.04 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.83 | |
| 100 | $ 0.64 | |||
| 250 | $ 0.47 | |||
| 1000 | $ 0.34 | |||
Description
General part information
CSD16323Q3 Series
This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
Documents
Technical documentation and resources
