CSD16323Q3T

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CSD16323Q3T

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Technical Specifications

Parameters and characteristics for this part

Specification	CSD16323Q3T

Current - Continuous Drain (Id) @ 25°C	105 A, 20 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	3 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.8 W, 74 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.4 V

CSD16323Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Technology	Vgs (Max) [Max]	Vgs (Max) [Min]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Texas Instruments CSD16323Q3C	Surface Mount	8 V	3 V	-55 °C	150 °C	3 W	MOSFET (Metal Oxide)	10 V	-8 V	8-PowerTDFN	1300 pF	25 V	1.4 V	N-Channel	8-SON-EP (3x3)	4.5 mOhm	21 A 60 A
Texas Instruments CSD16323Q3	Surface Mount	8 V	3 V	-55 °C	150 °C	3 W	MOSFET (Metal Oxide)	10 V	-8 V	8-PowerTDFN	1300 pF	25 V	1.4 V	N-Channel	8-VSON-CLIP (3.3x3.3)	4.5 mOhm	21 A 60 A
Texas Instruments CSD16323Q3T	Surface Mount	8 V	3 V	-55 °C	150 °C		MOSFET (Metal Oxide)	10 V	-8 V	8-PowerTDFN	1300 pF	25 V	1.4 V	N-Channel	8-VSON-CLIP (3.3x3.3)	4.5 mOhm	20 A 105 A	2.8 W 74 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

CSD16323Q3 Series

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

Documents

Technical documentation and resources