Integrated Circuits (ICs)

TS272IN

Obsolete

STMicroelectronics

IC CMOS 2 CIRCUIT 8MINI DIP

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Integrated Circuits (ICs)

TS272IN

Obsolete

STMicroelectronics

IC CMOS 2 CIRCUIT 8MINI DIP

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TS272IN

Amplifier Type	CMOS
Current - Input Bias	1 pA
Current - Output / Channel	45 mA
Current - Supply	1 mA
Mounting Type	Through Hole
Number of Circuits	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 C
Package / Case	8-DIP (0.300", 7.62mm)
Slew Rate	5.5 V/µs
Supplier Device Package	8-Mini DIP
Voltage - Input Offset	1.1 mV
Voltage - Supply Span (Max) [Max]	16 V
Voltage - Supply Span (Min) [Min]	3 V

TS272 Series

Micropower, wide range of input offset voltage

Part	Package / Case	Package / Case	Package / Case	Voltage - Supply Span (Min) [Min]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Input Offset	Current - Supply	Current - Input Bias	Voltage - Supply Span (Max) [Max]	Supplier Device Package	Number of Circuits	Amplifier Type	Current - Output / Channel	Slew Rate
STMicroelectronics TS272ACD	0.154 in	8-SOIC	3.9 mm	3 V	Surface Mount	70 °C	0 °C	900 µV	1 mA	1 pA	16 V	8-SO	2	CMOS	45 mA	5.5 V/µs
STMicroelectronics TS272BCDT	0.154 in	8-SOIC	3.9 mm	3 V	Surface Mount	70 °C	0 °C	250 µV	1 mA	1 pA	16 V	8-SO	2	CMOS	45 mA	5.5 V/µs
STMicroelectronics TS272IN		8-DIP (0.300" 7.62mm)		3 V	Through Hole	125 °C	-40 C	1.1 mV	1 mA	1 pA	16 V	8-Mini DIP	2	CMOS	45 mA	5.5 V/µs
STMicroelectronics TS272IDT	0.154 in	8-SOIC	3.9 mm	3 V	Surface Mount	125 °C	-40 C	1.1 mV	1 mA	1 pA	16 V	8-SOIC	2	CMOS	45 mA	5.5 V/µs
STMicroelectronics TS272BIDT	0.154 in	8-SOIC	3.9 mm	3 V	Surface Mount	125 °C	-40 C	250 µV	1 mA	1 pA	16 V	8-SOIC	2	CMOS	45 mA	5.5 V/µs
STMicroelectronics TS272ID	0.154 in	8-SOIC	3.9 mm	3 V	Surface Mount	125 °C	-40 C	1.1 mV	1 mA	1 pA	16 V	8-SOIC	2	CMOS	45 mA	5.5 V/µs
STMicroelectronics TS272IPT	0.173 in	8-TSSOP	4.4 mm	3 V	Surface Mount	125 °C	-40 C	1.1 mV	1 mA	1 pA	16 V	8-TSSOP	2	CMOS	45 mA	5.5 V/µs
STMicroelectronics TS272AIDT	0.154 in	8-SOIC	3.9 mm	3 V	Surface Mount	125 °C	-40 C	900 µV	1 mA	1 pA	16 V	8-SO	2	CMOS	45 mA	5.5 V/µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

TS272 Series

The TS272 devices are low cost, dual operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process allowing an excellent consumption-speed ratio. These series are ideally suited for low consumption applications.

Three power consumptions are available allowing to have always the best consumption-speed ratio:ICC= 10µA/amp.: TS27L2 (very low power)ICC= 150µA/amp.: TS27M2 (low power)ICC= 1mA/amp.: TS272 (standard)

These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 2).

Documents

Technical documentation and resources

No documents available