Discrete Semiconductor Products

APT65GP60L2DQ2G

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IGBT PT MOS 7 COMBI 600 V 65 A TO-264 MAX 3 TO-264 MAX TUBE ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

IGBT PT MOS 7 COMBI 600 V 65 A TO-264 MAX 3 TO-264 MAX TUBE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	APT65GP60L2DQ2G

Current - Collector (Ic) (Max)	198 A
Current - Collector Pulsed (Icm)	250 A
Gate Charge	210 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	833 W
Switching Energy	605 µJ, 895 µJ
Td (on/off) @ 25°C	30 ns, 90 ns
Test Condition	65 A, 15 V, 400 V, 5 Ohm
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector (Ic) (Max) [Max]	Package / Case	Input Capacitance (Cies) @ Vce	Mounting Type	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Configuration	Supplier Device Package	Input	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Current - Collector (Ic) (Max)	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Switching Energy	Test Condition
Microchip Technology APT65GP60JDQ2	130 A	ISOTOP	7.4 nF	Chassis Mount	PT	600 V	431 W	1.25 mA	Single	ISOTOP®	Standard	2.7 V
Microchip Technology APT65GP60L2DQ2G		TO-264-3 TO-264AA		Through Hole	PT	600 V	833 W					2.7 V	30 ns 90 ns	198 A	210 nC	-55 °C	150 °C	250 A	605 µJ 895 µJ	5 Ohm 15 V 65 A 400 V
Microchip Technology APT65GP60B2G	100 A	TO-247-3 Variant		Through Hole	PT	600 V	833 W					2.7 V	30 ns 91 ns		210 nC	-55 °C	150 °C	250 A	605 µJ 896 µJ	5 Ohm 15 V 65 A 400 V

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General part information

IGBT PT 600 V 198 A 833 W Through Hole

Technical documentation and resources