Discrete Semiconductor Products

GCMS020B120S1-E1

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DISCRETE SEMICONDUCTOR MODULES SIC 1200V 20MOHM MOSFET & 50A SBD SOT-227

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Discrete Semiconductor Products

Active

DISCRETE SEMICONDUCTOR MODULES SIC 1200V 20MOHM MOSFET & 50A SBD SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	GCMS020B120S1-E1

Current - Continuous Drain (Id) @ 25°C	113 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	215 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5279 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	395 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs
SemiQ GCMS020B120S1-E1	SiC (Silicon Carbide Junction Transistor)	Chassis Mount	215 nC	SOT-227-4 miniBLOC	25 V	-10 V	N-Channel	5279 pF	SOT-227	4 V	395 W	113 A	1.2 kV	175 °C	-55 °C	28 mOhm

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General part information

N-Channel 1200 V 113A (Tc) 395W (Tc) Chassis Mount SOT-227

Technical documentation and resources