Specification	NTAT6H406NT4G

Current - Continuous Drain (Id) @ 25°C	175 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	8040 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs [Max]	2.9 mOhm
Supplier Device Package	DPAK/ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

NTAT6H406N Series

N-Channel Power MOSFET 80 V, 175 A, 2.9 mΩ

Part	Technology	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTAT6H406NT4G	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.9 mOhm	80 V	10 V	20 V	110 nC	8040 pF	N-Channel	90 W	-55 °C	150 °C	DPAK/ATPAK	Surface Mount	175 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The NTAT6H406N is a N-Channel Power MOSFET, 80 V, 2.9 mΩ, 175 A

Technical documentation and resources