N-Channel Power MOSFET 80 V, 175 A, 2.9 mΩ
N-Channel Power MOSFET 80 V, 175 A, 2.9 mΩ
| Part | Technology | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.9 mOhm | 80 V | 10 V | 20 V | 110 nC | 8040 pF | N-Channel | 90 W | -55 °C | 150 °C | DPAK/ATPAK | Surface Mount | 175 A |