Discrete Semiconductor Products

2SJ305TE85LF

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MOSFET P-CH 30V 200MA SC59

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Discrete Semiconductor Products

Active

MOSFET P-CH 30V 200MA SC59

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ305TE85LF

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	2.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	92 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	200 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SC-59
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Mounting Type	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage 2SJ305TE85LF	4 Ohm	MOSFET (Metal Oxide)	200 mW	20 V	30 V	P-Channel	SC-59 SOT-23-3 TO-236-3	Surface Mount	150 °C	2.5 V	SC-59	92 pF	200 mA

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General part information

P-Channel 30 V 200mA (Ta) 200mW (Ta) Surface Mount SC-59

Technical documentation and resources