2SJ305 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET P-CH 30V 200MA SC59
| Part | Rds On (Max) @ Id, Vgs | Technology | Power Dissipation (Max) | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Mounting Type | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4 Ohm | MOSFET (Metal Oxide) | 200 mW | 20 V | 30 V | P-Channel | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 150 °C | 2.5 V | SC-59 | 92 pF | 200 mA |