Discrete Semiconductor Products
STD16N65M2
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 650 V, 11 A, 0.32 OHM, TO-252 (DPAK), SURFACE MOUNT
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Discrete Semiconductor Products
STD16N65M2
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 650 V, 11 A, 0.32 OHM, TO-252 (DPAK), SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STD16N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 19.5 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 110 W |
| Rds On (Max) @ Id, Vgs | 360 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2518 | $ 2.26 | |
Description
General part information
STD16N65M2 Series
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources