Specification	FDV304P

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.7 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds	63 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs [Max]	1.1 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

FDV304P Series

P-Channel Digital FET -25V, -0.46A, 1.1Ω

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max) [Max]	FET Type	Mounting Type	Package / Case	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)
ON Semiconductor FDV304P-F169	SOT-23-3	4.5 V	1.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	-8 V	P-Channel	Surface Mount	SC-59 SOT-23-3 TO-236-3	350 mW	4.5 V	2.7 V	1.1 Ohm	63 pF	1.5 V	25 V
ON Semiconductor FDV304P	SOT-23-3	4.5 V	1.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)		P-Channel	Surface Mount	SC-59 SOT-23-3 TO-236-3	350 mW	4.5 V	2.7 V	1.1 Ohm	63 pF	1.5 V	25 V	8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.49
		10	$ 0.30
		100	$ 0.19
		500	$ 0.14
		1000	$ 0.13
	Digi-Reel®	1	$ 0.49
		10	$ 0.30
		100	$ 0.19
		500	$ 0.14
		1000	$ 0.13
	Tape & Reel (TR)	3000	$ 0.11
		6000	$ 0.10
		9000	$ 0.09
		15000	$ 0.09
		21000	$ 0.08
		30000	$ 0.08
		75000	$ 0.07
ON Semiconductor	N/A	1	$ 0.08

Description

General part information

FDV304P Series

This P-Channel enhancement mode field effect transistors is produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Documents

Technical documentation and resources

Package Drawing-318-SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

Package Drawing