FDV304P Series

P-Channel Digital FET -25V, -0.46A, 1.1Ω

Catalog

P-Channel Digital FET -25V, -0.46A, 1.1Ω

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max) [Max]	FET Type	Mounting Type	Package / Case	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)
ON Semiconductor FDV304P-F169	SOT-23-3	4.5 V	1.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	-8 V	P-Channel	Surface Mount	SC-59 SOT-23-3 TO-236-3	350 mW	4.5 V	2.7 V	1.1 Ohm	63 pF	1.5 V	25 V
ON Semiconductor FDV304P	SOT-23-3	4.5 V	1.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)		P-Channel	Surface Mount	SC-59 SOT-23-3 TO-236-3	350 mW	4.5 V	2.7 V	1.1 Ohm	63 pF	1.5 V	25 V	8 V

Catalog

P-Channel Digital FET -25V, -0.46A, 1.1Ω

Key Features

-25 V, -0.46 A continuous, -1.5 A Peak.RDS(ON)= 1.1 Ω @ VGS= -4.5 V,RDS(ON)= 1.5 Ω @ VGS= -2.7 V

• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)< 1.5V.

• Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.

• Compact industry standard SOT-23 surface mount package.

Description

This P-Channel enhancement mode field effect transistors is produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.