Discrete Semiconductor Products
STGD6NC60H-1
ActiveSTMicroelectronics
N-CHANNEL 600 V, 7 A VERY FAST IGBT
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Discrete Semiconductor Products
STGD6NC60H-1
ActiveSTMicroelectronics
N-CHANNEL 600 V, 7 A VERY FAST IGBT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGD6NC60H-1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Pulsed (Icm) | 21 A |
| Gate Charge | 13.6 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power - Max [Max] | 62.5 W |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Switching Energy | 68 µJ, 20 µJ |
| Td (on/off) @ 25°C [custom] | 12 ns |
| Td (on/off) @ 25°C [custom] | 76 ns |
| Test Condition | 15 V, 390 V, 3 A, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1874 | $ 1.82 | |
Description
General part information
STGD6NC60H-1 Series
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.