LMG2610RRGR
Active650-V 170/248-MΩ GAN HALF-BRIDGE FOR ACF WITH INTEGRATED DRIVER, PROTECTION AND CURRENT SENSE
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LMG2610RRGR
Active650-V 170/248-MΩ GAN HALF-BRIDGE FOR ACF WITH INTEGRATED DRIVER, PROTECTION AND CURRENT SENSE
Technical Specifications
Parameters and characteristics for this part
| Specification | LMG2610RRGR |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 11.45 | |
| 10 | $ 10.53 | |||
| 25 | $ 10.09 | |||
| 100 | $ 8.89 | |||
| 250 | $ 8.45 | |||
| 500 | $ 7.91 | |||
| 1000 | $ 7.25 | |||
| Digi-Reel® | 1 | $ 11.45 | ||
| 10 | $ 10.53 | |||
| 25 | $ 10.09 | |||
| 100 | $ 8.89 | |||
| 250 | $ 8.45 | |||
| 500 | $ 7.91 | |||
| 1000 | $ 7.25 | |||
| Tape & Reel (TR) | 2000 | $ 6.46 | ||
| LCSC | Piece | 1 | $ 17.20 | |
| 200 | $ 6.86 | |||
| 500 | $ 6.63 | |||
| 1000 | $ 6.52 | |||
| Texas Instruments | LARGE T&R | 1 | $ 8.30 | |
| 100 | $ 7.25 | |||
| 250 | $ 5.59 | |||
| 1000 | $ 5.00 | |||
Description
General part information
LMG2610 Series
The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.
The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.
The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.
