LMG2610 Series
650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense
Manufacturer: Texas Instruments
Catalog
650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense
Key Features
• 650-V GaN power-FET half bridge170-mΩ low-side and 248-mΩ high-side GaN FETsIntegrated gate drivers with low propagation delays and adjustable turn-on slew-rate controlCurrent-sense emulation with high-bandwidth and high accuracyLow-side / high-side gate-drive interlockHigh-side gate-drive signal level shifterSmart-switched bootstrap diode functionHigh-side start up : < 8 usLow-side / high-side cycle-by-cycle over-current protectionOver-temperature protection withFLTpin reportingAUX idle quiescent current: 240 µAAUX standby quiescent current: 50 µABST idle quiescent current: 60 µAMaximum supply and input logic pin voltage: 26 V9x7 mm QFN package with dual thermal pads650-V GaN power-FET half bridge170-mΩ low-side and 248-mΩ high-side GaN FETsIntegrated gate drivers with low propagation delays and adjustable turn-on slew-rate controlCurrent-sense emulation with high-bandwidth and high accuracyLow-side / high-side gate-drive interlockHigh-side gate-drive signal level shifterSmart-switched bootstrap diode functionHigh-side start up : < 8 usLow-side / high-side cycle-by-cycle over-current protectionOver-temperature protection withFLTpin reportingAUX idle quiescent current: 240 µAAUX standby quiescent current: 50 µABST idle quiescent current: 60 µAMaximum supply and input logic pin voltage: 26 V9x7 mm QFN package with dual thermal pads
Description
AI
The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.
The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.
The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2610 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over temperature shut down.
The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.
The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.
The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2610 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over temperature shut down.
