Specification	FQP11P06

Current - Continuous Drain (Id) @ 25°C	11.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	53 W
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQP11P06 Series

Power MOSFET, P-Channel, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FQP11P06	10 V	TO-220-3	25 V	TO-220-3	53 W	11.4 A	Through Hole	P-Channel	4 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	17 nC	60 V	550 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQP11P06 Series

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for lowvoltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.