FQP11P06 Series

Power MOSFET, P-Channel, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220

Catalog

Power MOSFET, P-Channel, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FQP11P06	10 V	TO-220-3	25 V	TO-220-3	53 W	11.4 A	Through Hole	P-Channel	4 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	17 nC	60 V	550 pF

Catalog

Power MOSFET, P-Channel, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220

Key Features

-11.4 A, -60 V, RDS(on)= 175 mΩ (Max.) @ VGS= -10 V, ID= -5.7 A

• Low Gate Charge (Typ. 13 nC)

• Low Crss (Typ. 45 pF)

• 100% Avalanche Tested

• 175ºC Maximum Junction Temperature Rating

Description

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for lowvoltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.