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ONSONSNUP4301MR6T1
Discrete Semiconductor Products

FDC6304P

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ON Semiconductor

DUAL P-CHANNEL DIGITAL FET -25V, -0.46A, 1.1Ω

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ONSONSNUP4301MR6T1
Discrete Semiconductor Products

FDC6304P

Active
ON Semiconductor

DUAL P-CHANNEL DIGITAL FET -25V, -0.46A, 1.1Ω

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC6304P
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C460 mA
Drain to Source Voltage (Vdss)25 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]1.5 nC
Input Capacitance (Ciss) (Max) @ Vds62 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power - Max [Max]700 mW
Rds On (Max) @ Id, Vgs [Max]1.1 Ohm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1021$ 0.29
1021$ 0.29

Description

General part information

FDC6304P Series

These P-Channel enhancement mode field effect transistor are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Documents

Technical documentation and resources