
FDC6304P
ActiveDUAL P-CHANNEL DIGITAL FET -25V, -0.46A, 1.1Ω
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FDC6304P
ActiveDUAL P-CHANNEL DIGITAL FET -25V, -0.46A, 1.1Ω
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDC6304P |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 460 mA |
| Drain to Source Voltage (Vdss) | 25 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 62 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 700 mW |
| Rds On (Max) @ Id, Vgs [Max] | 1.1 Ohm |
| Supplier Device Package | SuperSOT™-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1021 | $ 0.29 | |
| 1021 | $ 0.29 | |||
Description
General part information
FDC6304P Series
These P-Channel enhancement mode field effect transistor are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Documents
Technical documentation and resources