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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

PSMN013-80YS,115

Active
Freescale Semiconductor - NXP

MOSFET N-CH 80V 60A LFPAK56

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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

PSMN013-80YS,115

Active
Freescale Semiconductor - NXP

MOSFET N-CH 80V 60A LFPAK56

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN013-80YS,115
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2420 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-669, SC-100
Power Dissipation (Max)106 W
Rds On (Max) @ Id, Vgs12.9 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.05
10$ 0.86
100$ 0.67
500$ 0.57
Digi-Reel® 1$ 1.05
10$ 0.86
100$ 0.67
500$ 0.57
Tape & Reel (TR) 1500$ 0.41
3000$ 0.40

Description

General part information

PSMN013 Series

N-Channel 80 V 60A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8

Documents

Technical documentation and resources