PSMN013 Series

Manufacturer: Freescale Semiconductor - NXP

Catalog

MOSFET N-CH 100V 68A D2PAK

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Power - Max [Max]	Configuration	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PSMN013-100BS,118	68 A	100 V	13.9 mOhm	-55 °C	175 ░C	20 V	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	MOSFET (Metal Oxide)	N-Channel	59 nC	D2PAK	3195 pF	170 W
Freescale Semiconductor - NXP PSMN013-60HSX	40 A	60 V	10 mOhm	-55 °C	175 ░C			8-LFPAK56 SOT-1205	Surface Mount	MOSFET (Metal Oxide)		30.1 nC	LFPAK56D	2163 pF		64 W	2 N-Channel (Dual)
Freescale Semiconductor - NXP PSMN013-60HLX	40 A	60 V	12.5 mOhm	-55 °C	175 ░C			8-LFPAK56 SOT-1205	Surface Mount	MOSFET (Metal Oxide)		22.4 nC	LFPAK56D	2953 pF		64 W	2 N-Channel (Dual)	2.1 V
Freescale Semiconductor - NXP PSMN013-80YS,115	60 A	80 V	12.9 mOhm	-55 °C	175 ░C	20 V	10 V	SC-100 SOT-669	Surface Mount	MOSFET (Metal Oxide)	N-Channel		LFPAK56 Power-SO8	2420 pF	106 W
Freescale Semiconductor - NXP PSMN013-30YLC,115	32 A	30 V	13.6 mOhm	-55 °C	175 ░C	20 V	10 V	SC-100 SOT-669	Surface Mount	MOSFET (Metal Oxide)	N-Channel		LFPAK56 Power-SO8	521 pF	26 W				8.3 nC
Freescale Semiconductor - NXP PSMN013-30MLC,115	39 A	30 V	13.6 mOhm	-55 °C	175 ░C	20 V	4.5 V 10 V		Surface Mount	MOSFET (Metal Oxide)	N-Channel	8 nC	LFPAK33	519 pF	38 W
Freescale Semiconductor - NXP PSMN013-100PS,127	68 A	100 V	13.9 mOhm	-55 °C	175 ░C	20 V	10 V	TO-220-3	Through Hole	MOSFET (Metal Oxide)	N-Channel	59 nC	TO-220AB	3195 pF	170 W