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3-XQFN
Discrete Semiconductor Products

PMZB550UNEYL

Active
Freescale Semiconductor - NXP

POWER MOSFET, N CHANNEL, 30 V, 590 MA, 0.55 OHM, SOT-883B, SURFACE MOUNT

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3-XQFN
Discrete Semiconductor Products

PMZB550UNEYL

Active
Freescale Semiconductor - NXP

POWER MOSFET, N CHANNEL, 30 V, 590 MA, 0.55 OHM, SOT-883B, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMZB550UNEYL
Current - Continuous Drain (Id) @ 25°C590 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]1.1 nC
Input Capacitance (Ciss) (Max) @ Vds30.3 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)1.67 W, 310 mW
Rds On (Max) @ Id, Vgs670 mOhm
Supplier Device PackageDFN1006B-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.22
100$ 0.14
500$ 0.10
1000$ 0.09
2000$ 0.08
5000$ 0.07
Digi-Reel® 1$ 0.36
10$ 0.22
100$ 0.14
500$ 0.10
1000$ 0.09
2000$ 0.08
5000$ 0.07
Tape & Reel (TR) 10000$ 0.06
20000$ 0.06
30000$ 0.05
50000$ 0.05
70000$ 0.05
100000$ 0.05

Description

General part information

PMZB550UNE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.