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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Drain to Source Voltage (Vdss) | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | DFN1006B-3 | 670 mOhm | 590 mA | 3-XFDFN | MOSFET (Metal Oxide) | 30 V | N-Channel | 1.1 nC | -55 °C | 150 °C | Surface Mount | 1.67 W 310 mW | 950 mV | 30.3 pF | 8 V | 1.5 V 4.5 V |