STW45NM60
ActiveN-CHANNEL 650V@TJMAX - 0.09 OHM - 45A TO-247 MDMESH™ POWER MOSFET
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STW45NM60
ActiveN-CHANNEL 650V@TJMAX - 0.09 OHM - 45A TO-247 MDMESH™ POWER MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW45NM60 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 45 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 134 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3800 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 417 W |
| Rds On (Max) @ Id, Vgs | 110 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
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Description
General part information
STW45NM60 Series
The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products.
Documents
Technical documentation and resources