Specification	NTHL019N60S5F

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	252 nC
Input Capacitance (Ciss) (Max) @ Vds	13400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	568 W
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.8 V

NTHL019N60S5F Series

Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 600 V, 75 A, 19 mΩ, TO-247

Part	Mounting Type	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor NTHL019N60S5F	Through Hole	TO-247-3	30 V	252 nC	75 A	TO-247-3	MOSFET (Metal Oxide)	600 V	4.8 V	10 V	-55 °C	150 °C	568 W	N-Channel	13400 pF	19 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 22.44
		10	$ 16.20
		100	$ 13.48
Newark	Each	250	$ 10.48
		500	$ 10.18
ON Semiconductor	N/A	1	$ 9.97

Description

General part information

NTHL019N60S5F Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.