NTHL019N60S5F Series

Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 600 V, 75 A, 19 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 600 V, 75 A, 19 mΩ, TO-247

Part	Mounting Type	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor NTHL019N60S5F	Through Hole	TO-247-3	30 V	252 nC	75 A	TO-247-3	MOSFET (Metal Oxide)	600 V	4.8 V	10 V	-55 °C	150 °C	568 W	N-Channel	13400 pF	19 mOhm

Catalog

Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 600 V, 75 A, 19 mΩ, TO-247

Key Features

• Ultra Low Gate Charge (Typ. Qg= 252 nC)

• Low Time Related Output Capacitance (Typ. Coss(tr.)= 3174 pF)

• Optimized Capacitance

• Excellent body diode performance (low Qrr, robust body diode)

• 650 V @ TJ= 150 °C

• Typ. RDS(on)= 15.2 mΩ

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

• Internal Gate Resistance: 3.5 Ω

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.