Specification	FCH76N60NF

Current - Continuous Drain (Id) @ 25°C	72.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Input Capacitance (Ciss) (Max) @ Vds	11045 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	543 W
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FCH76N60NF Series

Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247

Part	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case
ON Semiconductor FCH76N60NF	5 V	Through Hole	TO-247	MOSFET (Metal Oxide)	38 mOhm	300 nC	11045 pF	10 V	-55 °C	150 °C	543 W	72.8 A	N-Channel	600 V	30 V	TO-247-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	24	$ 12.89

Description

General part information

FCH76N60NF Series

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.