FCH76N60NF Series

Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247

Part	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case
ON Semiconductor FCH76N60NF	5 V	Through Hole	TO-247	MOSFET (Metal Oxide)	38 mOhm	300 nC	11045 pF	10 V	-55 °C	150 °C	543 W	72.8 A	N-Channel	600 V	30 V	TO-247-3

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247

Key Features

• RDS(on)= 28.7mΩ ( Typ.) @ VGS= 10V, ID= 38A

• Ultra low gate charge ( Typ. Qg= 230nC )

• Low effective output capacitance ( Typ. Coss.eff = 896pF )

• 100% avalanche tested

• RoHS compliant

Description

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.