Discrete Semiconductor Products

UPS3100E3/TR13

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DIODE SCHOTTKY 100V 3A POWERMITE

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Discrete Semiconductor Products

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DIODE SCHOTTKY 100V 3A POWERMITE

Technical Specifications

Parameters and characteristics for this part

Specification	UPS3100E3/TR13

Capacitance @ Vr, F	85 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Powermite®3
Speed	200 mA, 500 ns
Supplier Device Package	Powermite 3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	760 mV

Part	Package / Case	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Supplier Device Package	Technology
Microchip Technology UPS3100E3/TR13	Powermite®3	200 mA 500 ns	-55 °C	125 °C	200 µA	760 mV	85 pF	100 V	3 A	Surface Mount	Powermite 3	Schottky

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General part information

Diode 100 V 3A Surface Mount Powermite 3

Technical documentation and resources

No documents available