Discrete Semiconductor Products

NTMFSC4D2N10MC

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ON Semiconductor

N-CHANNEL DUAL COOLTM 56 POWERTRENCH® MOSFET 100V, ___A, 4.2MΩ

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Discrete Semiconductor Products

NTMFSC4D2N10MC

Active

ON Semiconductor

N-CHANNEL DUAL COOLTM 56 POWERTRENCH® MOSFET 100V, ___A, 4.2MΩ

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFSC4D2N10MC

Current - Continuous Drain (Id) @ 25°C	29.6 A
Current - Continuous Drain (Id) @ 25°C	116 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2856 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	7.9 W, 122 W
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	8-DFN (5x6.15)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTMFSC4D2N10MC Series

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 100V, ___A, 4.2mΩ

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTMFSC4D2N10MC	4.3 mOhm	42 nC	MOSFET (Metal Oxide)	20 V	2856 pF	100 V	8-PowerVDFN	N-Channel	8-DFN (5x6.15)	4 V	Surface Mount	29.6 A	116 A	7.9 W 122 W	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.58
		10	$ 3.03
		100	$ 2.15
		500	$ 1.77
		1000	$ 1.68
	Digi-Reel®	1	$ 4.58
		10	$ 3.03
		100	$ 2.15
		500	$ 1.77
		1000	$ 1.68
	Tape & Reel (TR)	3000	$ 1.68
ON Semiconductor	N/A	1	$ 1.54

Description

General part information

NTMFSC4D2N10MC Series

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Documents

Technical documentation and resources