NTMFSC4D2N10MC Series

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 100V, ___A, 4.2mΩ

Catalog

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 100V, ___A, 4.2mΩ

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTMFSC4D2N10MC	4.3 mOhm	42 nC	MOSFET (Metal Oxide)	20 V	2856 pF	100 V	8-PowerVDFN	N-Channel	8-DFN (5x6.15)	4 V	Surface Mount	29.6 A	116 A	7.9 W 122 W	-55 °C	175 ░C

Catalog

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 100V, ___A, 4.2mΩ

Key Features

• Max rDS(on)= 4.3 mΩ at VGS= 10 V, ID= 44 A

• Dual Cool™ Top Side Cooling PQFN package

• Max rDS(on)= 12 mΩ at VGS= 6 V, ID= 22 A

• High performance technology for extremely low rDS(on)

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.