Integrated Circuits (ICs)

IS43LR32800G-6BL

Active

ISSI, Integrated Silicon Solution Inc

DRAM CHIP MOBILE-DDR SDRAM 256M-BIT 8MX32 1.8V 90-PIN TF-BGA

Search across all available documentation for this part.

Integrated Circuits (ICs)

Active

ISSI, Integrated Silicon Solution Inc

DRAM CHIP MOBILE-DDR SDRAM 256M-BIT 8MX32 1.8V 90-PIN TF-BGA

Technical Specifications

Parameters and characteristics for this part

Part	Write Cycle Time - Word, Page	Memory Organization	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Clock Frequency	Memory Type	Memory Size	Technology	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Memory Format	Memory Interface	Access Time
ISSI, Integrated Silicon Solution Inc IS43LR32800G-6BL	15 ns	8M x 32	1.95 V	1.7 V	90-TFBGA	166 MHz	Volatile	256 Gbit	SDRAM - Mobile LPDDR	90-TFBGA (8x13)	70 °C	0 °C	Surface Mount	DRAM	Parallel	5.5 ns
ISSI, Integrated Silicon Solution Inc IS43LR32800F-6BL-TR	15 ns	8M x 32	1.95 V	1.7 V	90-TFBGA	166 MHz	Volatile	256 Gbit	SDRAM - Mobile LPDDR	90-TFBGA (8x13)	70 °C	0 °C	Surface Mount	DRAM	Parallel	5.5 ns
ISSI, Integrated Silicon Solution Inc IS43LR32800G-6BLI	15 ns	8M x 32	1.95 V	1.7 V	90-TFBGA	166 MHz	Volatile	256 Gbit	SDRAM - Mobile LPDDR	90-TFBGA (8x13)	85 °C	-40 °C	Surface Mount	DRAM	Parallel	5.5 ns
ISSI, Integrated Silicon Solution Inc IS43LR32800F-6BLI	15 ns	8M x 32	1.95 V	1.7 V	90-TFBGA	166 MHz	Volatile	256 Gbit	SDRAM - Mobile LPDDR	90-TFBGA (8x13)	85 °C	-40 °C	Surface Mount	DRAM	Parallel	5.5 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	240	$ 5.49

General part information

JEDEC standard 1.8V power supply.

VDD = 1.8V, VDDQ = 1.8V

Four internal banks for concurrent operation

Technical documentation and resources

No documents available