IS43LR32800 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
DRAM CHIP MOBILE-DDR SDRAM 256M-BIT 8MX32 1.8V 90-PIN TF-BGA
| Part | Technology | Package / Case | Memory Size | Memory Interface | Operating Temperature [Min] | Operating Temperature [Max] | Clock Frequency | Voltage - Supply [Max] | Voltage - Supply [Min] | Supplier Device Package | Mounting Type | Access Time | Write Cycle Time - Word, Page | Memory Organization [custom] | Memory Organization [custom] | Memory Format | Memory Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | SDRAM - Mobile LPDDR | 90-TFBGA | 256 Gbit | Parallel | 0 °C | 70 °C | 166 MHz | 1.95 V | 1.7 V | 90-TFBGA (8x13) | Surface Mount | 5.5 ns | 15 ns | 8 M | 32 bit | DRAM | Volatile |
ISSI, Integrated Silicon Solution Inc | SDRAM - Mobile LPDDR | 90-TFBGA | 256 Gbit | Parallel | -40 ¯C | 85 C | 166 MHz | 1.95 V | 1.7 V | 90-TFBGA (8x13) | Surface Mount | 5.5 ns | 15 ns | 8 M | 32 bit | DRAM | Volatile |
ISSI, Integrated Silicon Solution Inc | SDRAM - Mobile LPDDR | 90-TFBGA | 256 Gbit | Parallel | 0 °C | 70 °C | 166 MHz | 1.95 V | 1.7 V | 90-TFBGA (8x13) | Surface Mount | 5.5 ns | 15 ns | 8 M | 32 bit | DRAM | Volatile |
ISSI, Integrated Silicon Solution Inc | SDRAM - Mobile LPDDR | 90-TFBGA | 256 Gbit | Parallel | -40 ¯C | 85 C | 166 MHz | 1.95 V | 1.7 V | 90-TFBGA (8x13) | Surface Mount | 5.5 ns | 15 ns | 8 M | 32 bit | DRAM | Volatile |
ISSI, Integrated Silicon Solution Inc | SDRAM - Mobile LPDDR | 90-TFBGA | 256 Gbit | Parallel | -40 ¯C | 85 C | 166 MHz | 1.95 V | 1.7 V | 90-TFBGA (8x13) | Surface Mount | 5.5 ns | 15 ns | 8 M | 32 bit | DRAM | Volatile |
ISSI, Integrated Silicon Solution Inc | SDRAM - Mobile LPDDR | 90-TFBGA | 256 Gbit | Parallel | -40 ¯C | 85 C | 166 MHz | 1.95 V | 1.7 V | 90-TFBGA (8x13) | Surface Mount | 5.5 ns | 15 ns | 8 M | 32 bit | DRAM | Volatile |