Discrete Semiconductor Products

IRLI530GPBF

LTB

MOSFET N-CH 100V 9.7A TO220-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 100V 9.7A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRLI530GPBF

Current - Continuous Drain (Id) @ 25°C	9.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	930 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case
Vishay General Semiconductor - Diodes Division IRLI530GPBF	9.7 A	160 mOhm	10 V	N-Channel	100 V	42 W	2 V	930 pF	4 V 5 V	TO-220-3	Through Hole	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-220-3 Full Pack Isolated Tab
Vishay General Semiconductor - Diodes Division IRLI530G	9.7 A	160 mOhm	10 V	N-Channel	100 V	42 W	2 V	930 pF	4 V 5 V	TO-220-3	Through Hole	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-220-3 Full Pack Isolated Tab

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General part information

N-Channel 100 V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3

Technical documentation and resources