IRLI530 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 9.7A TO220-3
| Part | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 9.7 A | 160 mOhm | 10 V | N-Channel | 100 V | 42 W | 2 V | 930 pF | 4 V 5 V | TO-220-3 | Through Hole | -55 °C | 175 ░C | MOSFET (Metal Oxide) | TO-220-3 Full Pack Isolated Tab |
Vishay General Semiconductor - Diodes Division | 9.7 A | 160 mOhm | 10 V | N-Channel | 100 V | 42 W | 2 V | 930 pF | 4 V 5 V | TO-220-3 | Through Hole | -55 °C | 175 ░C | MOSFET (Metal Oxide) | TO-220-3 Full Pack Isolated Tab |