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Discrete Semiconductor Products
JANTX2N3585
ActiveMicrochip Technology
NPN SILICON HIGH-POWER 250V TO 300V, 2A
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Documents2N3584 2N3585
Discrete Semiconductor Products
JANTX2N3585
ActiveMicrochip Technology
NPN SILICON HIGH-POWER 250V TO 300V, 2A
Deep-Dive with AI
Documents2N3584 2N3585
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N3585 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-66-2, TO-213AA |
| Power - Max [Max] | 2.5 W |
| Qualification | MIL-PRF-19500/384 |
| Supplier Device Package | TO-66 (TO-213AA) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 750 mV |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 50 | $ 267.54 | |
| Microchip Direct | N/A | 1 | $ 267.54 | |
Description
General part information
JANTX2N3585-Transistor Series
This specification covers the performance requirements for NPN, silicon, power, 2N3584 and 2N3585 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for this device type as specified in MIL-PRF-19500/384. The device package for the encapsulated device type are as follows: (TO-66).
Documents
Technical documentation and resources