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STP45N40DM2AG
Discrete Semiconductor Products

STP45N40DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 400 V, 0.063 OHM TYP., 38 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE

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STP45N40DM2AG
Discrete Semiconductor Products

STP45N40DM2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 400 V, 0.063 OHM TYP., 38 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP45N40DM2AG
Current - Continuous Drain (Id) @ 25°C38 A
Drain to Source Voltage (Vdss)400 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2600 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)250 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs72 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 980$ 7.82
NewarkEach 1$ 9.66
10$ 9.65
25$ 6.08
50$ 5.91
100$ 5.74
250$ 5.46
500$ 5.18

Description

General part information

STP45N40DM2AG Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources